CAMARILLO, Calif. – Opto Diode Corp. in Camarillo, Calif., is introducing the SXUV100TF135 and SXUV100TF135B photodiodes with integrated thin-film filters for electro-optical applications such as laser power monitoring, semiconductor photolithography, and metrology systems that use extreme ultraviolet light.
The detectors have a 100-square-millimeter active area and a directly deposited thin-film filter for detection between 12 and 18 nanometers. Both detectors have typical responsivity of 0.09 A/W at 13.5 nanometers.
The SXUV100TF135 model is optimized for high-speed reverse bias voltage operation. The device has low capacitance, typically 260 pico farads, with a reverse bias voltage of 12 volts. The SXUV100TF135B is optimized for zero bias voltage operation where low dark current is of paramount importance. The detector has a high shunt resistance greater than 10 micro-Ohms.
Opto Diode's photodiodes with integrated thin-film filters offer stability and a design for extreme ultraviolet environments. Operating and storage temperatures range from -10 to 40 degrees Celsius in ambient environments and from -20 to 80 C in nitrogen or vacuum environments. Both devices are shipped with protective covers.
For more information contact Opto Diode online at http://optodiode.com.
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