Rugged gallium nitride (GaN) RF power amplifier for X-band radar applications introduced by Comtech PST

June 4, 2020
The device operates in temperatures from -40 to 65 degrees Celsius; in shock and vibration per MIL-STD-810F; and in altitudes as high as 30,000 feet.

MELVILLE, N.Y. – Comtech PST Corp. in Melville, N.Y., is introducing the model BMCAP99109-1500 gallium nitride (GaN) amplifier for X-band applications.

The AB linear design operates over the 9 to 10 GHz frequency range, and features pulse width and duty factor protection as well as thermal and load voltage standing wave ratio (VSWR) fault monitoring.

Features also include high output power dynamic range; efficiency; forward and reverse RF output; pulse width and duty factor protection; thermal and load VSWR protection; optional digital interface for control and status monitoring; fast blanking; and low phase noise.

Related: Rugged GaN RF and microwave amplifier for X-band pulsed radar applications introduced by Comtech PST

Performance specifications include frequency range of 9.0 to 10.0 GHz; peak output power of 1500 Watts typical; RF amplifier power gain of 62 decibels nominal; power gain variation of plus-or-minus 2 decibels; pulse width of 0.25 to 100 microseconds maximum; duty cycle of less than 6 percent maximum; pulse droop less than 0.015 decibels per microsecond; pulse rise & fall time of less than 50 nanoseconds; input VSWR of less than 2:1; and output load VSWR of less than 2:1.

The RF amplifier for radar applications operates in temperatures from -40 to 65 degrees Celsius at the baseplate; 0 to 95 percent humidity; in shock and vibration per MIL-STD-810F; and in altitudes as high as 30,000 feet. The device measures 9.6 by 6.8 by 2 inches, and weighs 5.5 pounds.

For more information contact Comtech PST online at www.comtechpst.com.

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