STMicroelectronics introduces low-RDS(on) MOSFETs for automotive power and battery systems

Within battery-management systems, the MOSFETs support core functions such as cell monitoring, balancing, and protection.
April 22, 2026
2 min read
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GENEVA - STMicroelectronics in Geneva has introduced a new family of low-RDS(on) MOSFETs built on its Smart STripFET F8 technology, designed to improve conduction efficiency and reduce silicon footprint in space-constrained automotive applications.

The first device in the series, the STL059N4S8AG, is a 40V/420A N-channel enhancement-mode MOSFET with RDS(on) of 0.59mΩ, packaged in a compact PowerFLAT 5x6 form factor. The small package helps reduce PCB area in control modules, while high thermal conductivity and efficient heat dissipation support stringent automotive reliability requirements. The device operates at temperatures up to 175°C and is AEC-Q101 qualified, with wettable flanks to enable optical inspection during automotive assembly.

The Smart STripFET F8 technology builds on ST’s established STripFET architecture with a modified trench gate structure that improves on-state performance and silicon-area efficiency. The resulting MOSFETs are optimized to minimize conduction losses in high-current applications, including automotive power distribution and battery management systems.

In these roles, the devices can be paired with ST’s STi²Fuse VIPower gate drivers, which provide tunable circuit-breaking capabilities to protect PCB traces, connectors, and wiring. In automotive electrical systems, the MOSFETs help deliver more battery energy to onboard loads while reducing power dissipation, contributing to improved overall efficiency and extended driving range.

Within battery-management systems, the MOSFETs support core functions such as cell monitoring, balancing, and protection. The low RDS(on) characteristic enhances efficiency during both charging and discharging cycles.

The STL059N4S8AG is now in production in automotive-grade. Additional devices in the series are planned, including the STL075N4S8AG rated at 350A with 0.75mΩ RDS(on), and the STK035N4S8AG rated at 780A with 0.35mΩ.

For more information, please visit https://www.st.com.