High-power GaAs MMIC amplifier for X-band communications and radar introduced by M/A-COM

Aug. 22, 2014
LOWELL, Mass., 22 Aug. 2014. M/A-COM Technology Solutions Inc. in Lowell, Mass., is introducing the MAAP-015036 high-power monolithic microwave integrated circuit (MMIC) amplifier for X-band communications and radar applications.
LOWELL, Mass., 22 Aug. 2014. M/A-COM Technology Solutions Inc. in Lowell, Mass., is introducing the MAAP-015036 high-power monolithic microwave integrated circuit (MMIC) amplifier for X-band communications and radar applications.

The MAAP-015036 RF and microwave is a two stage 8.5-to-10.5 GHz gallium arsenide (GaAs) MMIC power amplifier with saturated pulsed output power of 42 dBm, signal gain of 17 dB and typical 43 percent power added efficiency.

The power amplifier can be biased using a direct gate voltage or using an on-chip gate bias circuit. The device also offers dual sided bias architecture for optimum flexibility in assembly and board design.

For more information contact M/A-COM Technology Solutions online at www.macom.com.

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John Keller | Editor

John Keller is editor-in-chief of Military & Aerospace Electronics magazine, which provides extensive coverage and analysis of enabling electronic and optoelectronic technologies in military, space, and commercial aviation applications. A member of the Military & Aerospace Electronics staff since the magazine's founding in 1989, Mr. Keller took over as chief editor in 1995.

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