Photodiode for stability after extreme ultraviolet conditions introduced by Opto Diode

NEWBURY PARK, Calif., 12 Sept. 2014. Opto Diode in Newbury Park, Calif., is introducing the SXUV 2.5-millimeter photodiode with a circular active area that provides stability after extreme ultraviolet conditions.

Photodiode for stability after extreme ultraviolet conditions introduced by Opto Diode
Photodiode for stability after extreme ultraviolet conditions introduced by Opto Diode
NEWBURY PARK, Calif., 12 Sept. 2014. Opto Diode in Newbury Park, Calif., is introducing the SXUV 2.5-millimeter photodiode with a circular active area that provides stability after extreme ultraviolet conditions.

The electro-optical device is housed in a TO-39, 3-pin, windowless package that delivers responsivity down to 1 nanometer. The active area is typically 2.5-millimeter and has a minimum shunt resistance (Rsh) of 20 MOhms at plus-or-minus 10 mV (typical).

The photodiode is suited forhigh power laser monitoring at wavelengths 1nm -- 200nm, or other tasks that require a stable photodiode after EUV exposure.

The device parameters include reverse breakdown voltage of 20 Volts, with the capacitance of 1 nanofarads (nF). The response time is 1 nanosecond (typical) to a maximum of 2 nanoseconds.

Storage and operating temperatures range from -10 degrees 40 Celsius, and from -20 to 80 C in nitrogen or vacuum conditions. The lead soldering temperature (0.08 inches from the case for 10 seconds) is 260 C; the maximum junction temperature is 70 C.

For more information contact Opto Diode online at http://optodiode.com.

More in Test