Gallium nitride (GaN) amplifier for X-band radar applications introduced by Comtech PST

Feb. 14, 2014
MELVILLE, N.Y., 14 Feb. 2014. Comtech PST Corp. in Melville, N.Y., is introducing the model MC858109-600 gallium nitride (GaN) amplifier for X-band radar applications. The AB linear design operates over the 8.5-to-10 GHz frequency range.

MELVILLE, N.Y., 14 Feb. 2014. Comtech PST Corp. in Melville, N.Y., is introducing the model MC858109-600 gallium nitride (GaN) amplifier for X-band radar applications. The AB linear design operates over the 8.5-to-10 GHz frequency range.

The GaN amplifier has options for control of phase and amplitude to allow for integration into high-power systems with conventional binary or phased array combining approaches for power levels to 10 kilowatts.

Features include high output power dynamic range; efficiency; RF input & output sample detectors; pulse width and duty factor protection; thermal and load VSWR protection; optional digital interface for control and status monitoring; optional phase and amplitude control; and is suitable building block for phased array systems.

For more information contact Comtech PST online at www.comtechpst.com.

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John Keller | Editor

John Keller is editor-in-chief of Military & Aerospace Electronics magazine, which provides extensive coverage and analysis of enabling electronic and optoelectronic technologies in military, space, and commercial aviation applications. A member of the Military & Aerospace Electronics staff since the magazine's founding in 1989, Mr. Keller took over as chief editor in 1995.

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