Triple balanced GaAs MESFET MMIC mixer die for military sensors introduced by Hittite

CHELMSFORD, Mass., 10 Jan. 2012. Hittite Microwave Corp. in Chelmsford, Mass., is introducing a triple-balanced gallium arsenide (GaAs) metal semiconductor field effect transistor (MESFET) monolithic microwave integrated circuit (MMIC) mixer die for microwave & millimeter wave radios, military sensors, and test and measurement applications from 26 to 32 GHz.

Hittite 10 Jan 2012

CHELMSFORD, Mass., 10 Jan. 2012. Hittite Microwave Corp. in Chelmsford, Mass., is introducing a triple-balanced gallium arsenide (GaAs) metal semiconductor field effect transistor (MESFET) monolithic microwave integrated circuit (MMIC) mixer die for microwave & millimeter wave radios, military sensors, and test and measurement applications from 26 to 32 GHz.

The HMC1015 triple balanced GaAs MESFET MMIC mixer die accepts IF frequencies from 16 to 22 GHz, and RF frequencies from 26 to 32 GHz, and employs a passive architecture that needs no DC bias and no external components or matching circuitry.

The HMC1015 RF and microwave component operates with LO drive levels as low as +9 dBm, and is suited as the frequency converter core in upconversion and downconversion applications. This mixer die exhibits consistent conversion gain and compression characteristics across its operating bandwidth, while on-chip balun structures provide LO to RF, LO to IF, and 2LO to IF isolations of greater than 30 decibels, company officials say.

The HMC1015 comes in bare die form and has RF I/Os which are internally matched to 50 Ohms. For more information contact Hittite online at www.hittite.com.


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